Samsung MZ-V9E1T0B/AM 990 EVO 1TB Triple-Level Cell PCI Express NVMe 5.0 x2 M.2 2280 Solid State Drive
Random Read : 20K IOPS
Random Write : 90K IOPS
Sequential Read : 5000 MB/s
Sequential Write : 4200 MB/s
Storage Capacity : 1 TB
Drive Interface : PCI Express NVMe
Interface Standard : PCI Express NVMe 5.0 x2
Form Factor : M.2 2280


